EurekAlert!

Scientists smash record in stacking semiconductor transistors for large-area electronics

The six stacks of semiconductors for hybrid complementary metal-oxide semiconductor (CMOS) microchips advances miniaturization and topples the previous record of two stack King Abdullah University of ...
EurekAlert!

World’s first N-channel diamond field-effect transistor

(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
DrBicuspid

DALSA launches new CMOS-based x-ray panels

Canadian digital imaging developer DALSA has launched the first in a new family of x-ray digital detector panels based on complementary metal-oxide semiconductor (CMOS) technology, the company said.
HotHardware

Intel Demos Transistor Scaling Breakthroughs That Keep Moore's Law Alive And Well

Intel's upcoming RibbonFET technology is set to debut in the company's 20A node next year, but already the chip maker is showcasing the next step: 3D stacked CMOS (complementary metal oxide ...
Nature

CMOS Image Sensors and Time-of-Flight Technology

CMOS image sensors have become a cornerstone of modern imaging, leveraging the advantages of low power consumption, high speed, and scalability inherent in complementary metal–oxide–semiconductor ...
Semiconductor Engineering

Device Characteristics of GAA-Structured CMOS and CTFET Under Varying Temperatures

A new technical paper titled “Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application” was published by researchers at National Tsing Hua University and ...
Electronic Design

10-Gb PHY Transceiver Built Using SOI-CMOS Technology

Debuting as the market’s first 10-Gb Ethernet physical-layer large-scale integration (LAN-PHY LSI) transceiver designed using a combination of silicon-on-insulator and complementary metal-oxide ...