Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...

NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...

Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...

NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and ...

VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...

SAN JOSE, Calif., May 13, 2024 /PRNewswire/ -- NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body ...

Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...

SK Hynix has unveiled a long-term roadmap for next-generation DRAM technologies, laying out a vision that aims to drive sustainable innovation over the next 30 years as the global semiconductor ...

Hitachi, Ltd. (NYSE: HIT / TSE: 6501) in cooperation with Elpida Memory, Inc. (TSE: 6665), have proposed a new DRAM(*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell ...

Taking over from SRAM has been a tough battle for DRAM, but its all a very different story than it was 10 years ago The rapid uptake of smartphones around the world has ensured the future of DRAM ...