Eindhoven, Netherlands—NXP Semiconductors introduced the first in a series of silicon-based discrete products with the release of the BFU725F microwave NPN transistor. The BFU725F is RoHS compliant ...

High-frequency transistor limits can be extended and circuit gain increased through a new technique that neutralizes the detrimental effect of emitter inductance. This parameter has a serious effect ...

High Electron Mobility Transistors (HEMTs) represent a pivotal class of devices in modern semiconductor technology, valued for their exceptional frequency performance and low noise characteristics.

This application note discusses the switching capabilities of bipolar transistors, including charge analysis and circuit techniques to permit high-frequency saturated switching. Circuit examples are ...

NTT has further advanced the semiconductor technology of aluminum nitride (AlN) 1, and has succeeded, for the first time in the world, in operating AlN-based high-frequency transistors. The issues ...

EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. EPC announces the EPC2025, a 300 ...

David Sarnoff’s name is attached to an award given by the IEEE, the big technical professional association. This year, the recipient is an expert in high-frequency transistor technology. Mark J.W.

The Professional Research Experience Program (PREP) is a special partnership between the National Institute of Standards and Technology (NIST) and the University of Colorado Boulder. PREP provides ...

THE properties of the amplifier to be described are entirely due to the type of transistor used, and the purpose of this communication is to report on its suitability for the amplification of ...

Researchers have found a low-cost way for backscatter radios to support high-throughput communication and 5G-speed Gb/sec data transfer using only a single transistor when previously it required ...