A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...
MILPITAS, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM ...
“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
In a major industry milestone, Samsung Electronics Co. Ltd. today announced that it has begun producing chips using its latest three-nanometer semiconductor manufacturing process. The process will ...
Imec recently unveiled strained Germanium devices based on a silicon-replacement process, a first according to the research center. The process involves growing a Ge/SiGe quantum-well heterostructure ...
Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent ...
TOKYO & NEW YORK & SUNNYVALE, Calif. – 16 Dec 2008: Toshiba Corporation (TOKYO:6502), IBM (NYSE: IBM), and AMD (NYSE:AMD) today announced that they have together developed a Static Random Access ...
The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.
Microchip fab plants in the United States can cram billions of data processing transistors onto a tiny silicon chip, but a critical device, in essence a “clock,” to time the operation of those ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results