Samsung Electronics today announced that it has developed the first all-DRAM stacked memory package using ‘through silicon via’ (TSV) technology, which will soon result in memory packages that are ...

Researchers have developed a stacking technology for a magneto-resistive random access memory (MRAM) to separately form a single-crystal tunnel magnetoresistive (TMR) thin film and then bond it to a ...

(Nanowerk News) The magnetic, conductive and optical properties of complex oxides make them key to components of next-generation electronics used for data storage, sensing, energy technologies, ...

NAPERVILLE, Ill. — Tachyon Semiconductor Inc. and Los Alamos National Laboratories announced an alliance to develop system-on-a-chip (SoC) designs, based on Tachyon's wafer-stacking process technology ...

Stacking ultrathin complex oxide single-crystal layers allows researchers to create new structures with hybrid properties and multiple functions. Now, using a new platform, researchers will be able to ...