IXYS introduces IXRFD615 device as the new high-speed, high-current gate driver that is specifically designed to drive MOSFETs in Class D and E RF applications. It is in low-inductance surface mount ...

IXYS announced the introduction of the DVRFD630 and DVRFD631 RF MOSFET Gate Driver Development Boards. IXYS announced the introduction of the DVRFD630 and DVRFD631 RF MOSFET Gate Driver Development ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...

IXYS RF’s new line of low capacitance linear RF MOSFETs is ideal for applications up to 250 MHz, including1.5T and 3T MRI, HF and VHF base stations and broadcast applications. The new linear Z-MOS TM ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new 6.5W silicon radio-frequency (RF) high-power metal-oxide ...

FORT COLLINS, USA: IXYS Corp. a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of the DVRFD630 and ...

As wireless technology evolves into higher frequencies, many applications are demanding higher isolation performance. To satisfy this need, Peregrine Semiconductor has announced a high-isolation, SPST ...

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