Edward Ong, senior product marketing manager at Power Integrations said: “The Qrr of these new Qspeed diodes is half that of the next best ultra-fast silicon diodes, resulting in very high system ...

Developed by Power Integrations, the 600-V 12-A diodes feature reverse-recovery charge claimed to be the lowest in the industry. Generally speaking, silicon-carbide (SiC) technology provides superior ...

Reliability, efficiency, and system cost are the three key elements in solar inverter design. Vast efforts are being devoted to enhance the performance of solar inverters and so reduce the price per ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...

The paper represents the electrical behaviour of a new Gallium Arsenide (GaAs) power Schottky Diode compared to the bipolar silicon diodes. The paper also introduces its electrical measurements ...

A new diode looks set to steal the humble LED's thunder. Dubbed a diode for light, and crafted using standard silicon chip fabrication techniques, this is a key discovery that will pave the path to ...

When we use an electronic component, we have some idea of what goes on inside it. We know that inside a transistor there’s a little piece of semiconductor with a junction made from differently doped ...

The physicist William Shockley is perhaps today best known for three things: his role in the invention of the transistor, his calamitous management of Shockley Semiconductor which led to a mass ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...