The 800-mW NESG250134 and 1W NESG260234 medium-power SiGe (silicon-germanium) HBT (heterojunction-bipolar-transistor) amplifiers suit use in two-way radio applications, such as FRS (Family Radio ...
Last time on Circuit VR, we looked at creating a very simple common emitter amplifier, but we didn’t talk about how to select the capacitor values, or much about why we wanted them. We are going to ...
Liam Devlin and Andy Dearn describe the design of a 25W X-band gallium nitride (GaN) power amplifier. Gallium nitride (GaN) technology is very well suited to the realisation of solid-state microwave ...
Just as the common emitter amplifier and common base amplifier each tied those respective transistor terminals to a fixed potential and used the other two terminals as amplifier input and output, so ...
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